DRY ETCHING TECHNOLOGY FOR 1-MU-M VLSI FABRICATION

[1] 64-KBIT DYNAMIC MOS RAM [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1978, 13 (03) : 333 - 338

[2] PLASMA-ETCHING - DISCUSSION OF MECHANISMS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 391 - 403

[3] INVESTIGATIONS ON DAMAGE CAUSED BY ION ETCHING OF SIO2 LAYERS AT LOW-ENERGY AND HIGH DOSE [J]. SOLID-STATE ELECTRONICS, 1977, 20 (01) : 51 - 55

[4] SELECTIVE ETCHING OF SILICON DIOXIDE USING REACTIVE ION ETCHING WITH CF4-H2 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) : 1419 - 1421

[5] CHLOROMETHYLATED POLYSTYRENE AS A DRY ETCHING-RESISTANT NEGATIVE RESIST FOR SUB-MICRON TECHNOLOGY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (09) : 1628 - 1630

[6] JENKINS MW, 1977, J ELECTROCHEM SOC, V124, P757, DOI 10.1149/1.2133401

[7] A FAULT-TOLERANT 256K RAM FABRICATED WITH MOLYBDENUM-POLYSILICON TECHNOLOGY [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1980, 15 (05) : 865 - 872

[8] PREFERENTIAL SIO2 ETCHING ON SI SUBSTRATE BY PLASMA REACTIVE SPUTTER ETCHING [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (01) : 175 - 176

[9] UNDERCUTTING PHENOMENA IN AL PLASMA-ETCHING [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (07) : L405 - L408

[10] Sakakibara Y., 1980, International Electron Devices Meeting. Technical Digest, P425

[1] 64-KBIT DYNAMIC MOS RAM [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1978, 13 (03) : 333 - 338

[2] PLASMA-ETCHING - DISCUSSION OF MECHANISMS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 391 - 403

[3] INVESTIGATIONS ON DAMAGE CAUSED BY ION ETCHING OF SIO2 LAYERS AT LOW-ENERGY AND HIGH DOSE [J]. SOLID-STATE ELECTRONICS, 1977, 20 (01) : 51 - 55

[4] SELECTIVE ETCHING OF SILICON DIOXIDE USING REACTIVE ION ETCHING WITH CF4-H2 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) : 1419 - 1421

[5] CHLOROMETHYLATED POLYSTYRENE AS A DRY ETCHING-RESISTANT NEGATIVE RESIST FOR SUB-MICRON TECHNOLOGY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (09) : 1628 - 1630

[6] JENKINS MW, 1977, J ELECTROCHEM SOC, V124, P757, DOI 10.1149/1.2133401

[7] A FAULT-TOLERANT 256K RAM FABRICATED WITH MOLYBDENUM-POLYSILICON TECHNOLOGY [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1980, 15 (05) : 865 - 872

[8] PREFERENTIAL SIO2 ETCHING ON SI SUBSTRATE BY PLASMA REACTIVE SPUTTER ETCHING [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (01) : 175 - 176

[9] UNDERCUTTING PHENOMENA IN AL PLASMA-ETCHING [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (07) : L405 - L408

[10] Sakakibara Y., 1980, International Electron Devices Meeting. Technical Digest, P425