A FAULT-TOLERANT 256K RAM FABRICATED WITH MOLYBDENUM-POLYSILICON TECHNOLOGY

被引：34

作者：

MANO, T

TAKEYA, K

WATANABE, T

IEDA, N

KIUCHI, K

ARAI, E

OGAWA, T

HIRATA, K

机构：

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1980年 / 15卷 / 05期

关键词：

D O I：

10.1109/JSSC.1980.1051484

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：865 / 872

页数：8

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