PROFILE CONTROLLED ETCHING FOR MO/WSIX DOUBLE-LAYERS

被引：6

作者：

KURIYAMA, Y

SUZUKI, M

HIRAYAMA, M

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1986年 / 25卷 / 02期

关键词：

D O I：

10.1143/JJAP.25.L96

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L96 / L98

页数：3

共 9 条

[1]

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[5] A NEW SELF-ALIGNED GAAS-FET WITH A MO/WSIX T-GATE [J].

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[6] SUBMICROMETER GATE FABRICATION OF GAAS MESFET BY PLASMA ETCHING [J].

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[7]

UENO K, 1985, 17TH C SOL STAT DEV, P405

[8]

YOKOYAMA N, 1980, INT SOLID STATE CIRC, P44

[9] REACTIVE ION ETCHING FOR SUB-MICRON STRUCTURES OF REFRACTORY-METAL SILICIDES AND POLYCIDES [J].

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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04) :1037-1042

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