SELF-ALIGNED GATE GAAS IC WITH 4.0-GHZ CLOCK FREQUENCY

[1] A 3-5 GHZ SELF-ALIGNED SINGLE-CLOCKED BINARY FREQUENCY-DIVIDER ON GAAS [J]. IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1980, 127 (05): : 270 - 277

[2] DAMAYKAVALA F, 1981, I PHYS C SER, V63

[3] SELF-ALIGNED SUB-MICRON GATE DIGITAL GAAS INTEGRATED-CIRCUITS [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (04) : 102 - 104

[4] NAKAYAMA Y, 1983, FEB ISSCC, P48

[5] HIGH-SPEED LOGIC AT 300-K WITH SELF-ALIGNED SUBMICROMETER-GATE GAAS-MESFETS [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (07) : 215 - 217

[6] GAAS MESFET LOGIC WITH 4-GHZ CLOCK RATE [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1977, 12 (05) : 485 - 496

[7] LSI PROCESSING TECHNOLOGY FOR PLANAR GAAS INTEGRATED-CIRCUITS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) : 1116 - 1124

[8] HIGH-SPEED GAAS DIGITAL INTEGRATED-CIRCUIT WITH CLOCK FREQUENCY OF 4-1 GHZ [J]. ELECTRONICS LETTERS, 1981, 17 (08) : 291 - 292

[9] ORIENTATION EFFECT OF SELF-ALIGNED SOURCE DRAIN PLANAR GAAS SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1983, 42 (03) : 270 - 271

[10] YOKOYAMA N, 1981, FEB ISSCC, P218

[1] A 3-5 GHZ SELF-ALIGNED SINGLE-CLOCKED BINARY FREQUENCY-DIVIDER ON GAAS [J]. IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1980, 127 (05): : 270 - 277

[2] DAMAYKAVALA F, 1981, I PHYS C SER, V63

[3] SELF-ALIGNED SUB-MICRON GATE DIGITAL GAAS INTEGRATED-CIRCUITS [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (04) : 102 - 104

[4] NAKAYAMA Y, 1983, FEB ISSCC, P48

[5] HIGH-SPEED LOGIC AT 300-K WITH SELF-ALIGNED SUBMICROMETER-GATE GAAS-MESFETS [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (07) : 215 - 217

[6] GAAS MESFET LOGIC WITH 4-GHZ CLOCK RATE [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1977, 12 (05) : 485 - 496

[7] LSI PROCESSING TECHNOLOGY FOR PLANAR GAAS INTEGRATED-CIRCUITS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) : 1116 - 1124

[8] HIGH-SPEED GAAS DIGITAL INTEGRATED-CIRCUIT WITH CLOCK FREQUENCY OF 4-1 GHZ [J]. ELECTRONICS LETTERS, 1981, 17 (08) : 291 - 292

[9] ORIENTATION EFFECT OF SELF-ALIGNED SOURCE DRAIN PLANAR GAAS SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1983, 42 (03) : 270 - 271

[10] YOKOYAMA N, 1981, FEB ISSCC, P218