SUBMICROMETER GATE FABRICATION OF GAAS MESFET BY PLASMA ETCHING

被引：19

作者：

TAKAHASHI, S

MURAI, F

KODERA, H

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1978年 / 25卷 / 10期

关键词：

D O I：

10.1109/T-ED.1978.19254

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：1213 / 1218

页数：6

相关论文

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[8] SUBMICRON SINGLE-GATE AND DUAL-GATE GAAS MESFETS WITH IMPROVED LOW-NOISE AND HIGH-GAIN PERFORMANCE
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[9] HALF-MICRON GATE GAAS FET FABRICATED BY CHEMICAL DRY ETCHING
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