OPTIMIZED DESIGN OF GAAS FETS FOR LOW-NOISE MICROWAVE-AMPLIFIERS

被引：2

作者：

ASAI, S ^{[1
]}

OKAZAKI, S ^{[1
]}

KODERA, H ^{[1
]}

机构：

[1] HITACHI LTD,CENT RES LAB,TOKYO,JAPAN

来源：

关键词：

D O I：

10.1016/0038-1101(76)90008-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：463 / 470

页数：8

共 16 条

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[2] ASAI S, 1974, J JAPAN SOC APPL PHY, V43, P441
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[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1973, SC 8 (01) : 54 - 58
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LEHOVEC, K
ZULEEG, R
[J]. SOLID-STATE ELECTRONICS, 1970, 13 (10) : 1415 - &
[8] Liechti C. A., 1973, Digest of Technical Papers of the 1973 IEEE International Solid State Circuits Conference, P74
[9] SCHOTTKY BARRIER GATE FIELD EFFECT TRANSISTOR
MEAD, CA
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (02): : 307 - &
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