CHARACTERIZATION OF WSIX/GAAS SCHOTTKY CONTACTS

被引：66

作者：

OHNISHI, T

YOKOYAMA, N

ONODERA, H

SUZUKI, S

SHIBATOMI, A

机构：

来源：

关键词：

D O I：

10.1063/1.94400

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：600 / 602

页数：3

共 7 条

[1] ELLIOTT RP, 1965, CONSTITUTION BINARY, P821
[2] NAKAYAMA Y, 1983, FEB ISSCC, P48
[3] OBROWSKI W, 1960, J I MET, V89, P79
[4] MICROSTRUCTURE AND SCHOTTKY-BARRIER HEIGHT OF IRIDIUM SILICIDES FORMED ON SILICON
OHDOMARI, I
KUAN, TS
TU, KN
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (11) : 7020 - 7029
[5] PARALLEL SILICIDE CONTACTS
OHDOMARI, I
TU, KN
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (07) : 3735 - 3739
[6] TIW SILICIDE GATE SELF-ALIGNMENT TECHNOLOGY FOR ULTRAHIGH-SPEED GAAS-MESFET LSI VLSIS
YOKOYAMA, N
OHNISHI, T
ODANI, K
ONODERA, H
ABE, M
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (10) : 1541 - 1547
[7] YOKOYAMA N, 1983, FEB ISSCC, P44