TIW SILICIDE GATE SELF-ALIGNMENT TECHNOLOGY FOR ULTRAHIGH-SPEED GAAS-MESFET LSI VLSIS

[1] PLANAR GAAS IC TECHNOLOGY - APPLICATIONS FOR DIGITAL LSI [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1978, 13 (04) : 419 - 426

[2] THEORETICAL CONSIDERATIONS ON LATERAL SPREAD OF IMPLANTED IONS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (02) : 134 - +

[3] ISHIKAWA H, 1977, ISSCC DIG TECH PAPER, P200

[4] KOHN E, 1979, IEDM TECH DIG, P469

[5] Lee F. S., 1980, Proceedings of the IEEE International Conference on Circuits and Computers ICCC 80, P697

[6] GAAS GIGABIT LOGIC-CIRCUITS USING NORMALLY-OFF MESFETS [J]. ELECTRONICS LETTERS, 1980, 16 (09) : 315 - 316

[7] MIZUTANI T, 1979, 1ST IEEE MTT S SPEC, P93

[8] MIZUTANI Y, 1980, 12TH P C SOL STAT DE

[9] REFRACTORY SILICIDES FOR INTEGRATED-CIRCUITS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (04): : 775 - 792

[10] NISHI H, 1981, JAPAN J APPL PHYS S, V20

[1] PLANAR GAAS IC TECHNOLOGY - APPLICATIONS FOR DIGITAL LSI [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1978, 13 (04) : 419 - 426

[2] THEORETICAL CONSIDERATIONS ON LATERAL SPREAD OF IMPLANTED IONS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (02) : 134 - +

[3] ISHIKAWA H, 1977, ISSCC DIG TECH PAPER, P200

[4] KOHN E, 1979, IEDM TECH DIG, P469

[5] Lee F. S., 1980, Proceedings of the IEEE International Conference on Circuits and Computers ICCC 80, P697

[6] GAAS GIGABIT LOGIC-CIRCUITS USING NORMALLY-OFF MESFETS [J]. ELECTRONICS LETTERS, 1980, 16 (09) : 315 - 316

[7] MIZUTANI T, 1979, 1ST IEEE MTT S SPEC, P93

[8] MIZUTANI Y, 1980, 12TH P C SOL STAT DE

[9] REFRACTORY SILICIDES FOR INTEGRATED-CIRCUITS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (04): : 775 - 792

[10] NISHI H, 1981, JAPAN J APPL PHYS S, V20