A NEW SELF-ALIGNED GAAS-FET WITH A MO/WSIX T-GATE

被引：6

作者：

SUZUKI, M

KURIYAMA, Y

HIRAYAMA, M

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1985年 / 6卷 / 10期

关键词：

D O I：

10.1109/EDL.1985.26223

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：542 / 544

页数：3

共 10 条

[1]

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[3]

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[4] CHARACTERIZATION OF WSIX/GAAS SCHOTTKY CONTACTS [J].

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OHNISHI T, 1984, 16TH P C SOL STAT DE, P391

[6] OBTAINING THE SPECIFIC CONTACT RESISTANCE FROM TRANSMISSION-LINE MODEL MEASUREMENTS [J].

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UCHITOMI N, 1984, 16TH C SOL STAT DEV, P383

[8]

Yamasaki K., 1982, International Electron Devices Meeting. Technical Digest, P166

[9] SELF-ALIGN IMPLANTATION FOR N+-LAYER TECHNOLOGY (SAINT) FOR HIGH-SPEED GAAS ICS [J].

YAMASAKI, K ;

ASAI, K ;

MIZUTANI, T ;

KURUMADA, K .

ELECTRONICS LETTERS, 1982, 18 (03) :119-121

[10] BELOW 10 PS/GATE OPERATION WITH BURIED P-LAYER SAINT FETS [J].

YAMASAKI, K ;

KATO, N ;

HIRAYAMA, M .

ELECTRONICS LETTERS, 1984, 20 (25-2) :1029-1031

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