CONTINUOUS WAVE LASER ASSISTED CHEMICAL MATERIAL REMOVAL FROM MO, W, AND SI AT FAINT RED HOT TEMPERATURES (700-800-DEGREES-C)

被引：7

作者：

KOREN, G

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 09期

关键词：

D O I：

10.1063/1.96422

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1012 / 1014

页数：3

共 11 条

[1]

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APPLIED PHYSICS LETTERS, 1984, 45 (01) :10-12

[7]

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APPLIED PHYSICS LETTERS, 1985, 46 (07) :654-656

[9] PHOTO-EXCITED ETCHING OF POLYCRYSTALLINE AND SINGLE-CRYSTALLINE SILICON IN CL2 ATMOSPHERE [J].

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JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (01) :68-74

[10] LASER-PRODUCED PLASMA IN CRYSTALLINE ALPHA-AL2O3 AND ALUMINUM METAL [J].

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APPLIED PHYSICS LETTERS, 1984, 44 (07) :664-666

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