学术探索
学术期刊
新闻热点
数据分析
智能评审

ZnOA1N/diamond layered structure for SAW devices combining high velocity and high electromechanical coupling coefficient

被引：47
作者：
El Hakiki, M
Elmazria, O
Assouar, MB
Mortet, V
Le Brizoual, L
Vanecek, M
Alnot, P
机构：
[1] Univ Nancy 1, CNRS, UMR 7040, LPMIA, F-54506 Vandoeuvre Les Nancy, France
[2] Acad Sci Czech Republ, Inst Phys, CZ-16253 Prague, Czech Republic
[3] Limburgs Univ Ctr, IMO, B-3590 Diepenbeek, Belgium
来源：
DIAMOND AND RELATED MATERIALS | 2005年 / 14卷 / 3-7期
关键词：
aluminium nitride; zinc oxide; diamond; surface acoustic wave devices;
D O I：
10.1016/j.diamond.2005.01.002
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A new layered structure ZnO/AIN/diamond, is studied for high-frequency and high electromechanical coupling (K-2) SAW devices. Theoretical study was performed to calculate the phase velocity and K-2 dispersion curves of the Rayleigh mode and its higher modes as well as the leaky waves. Both high values of K-2 (> 4%) and acoustic velocities higher than 15 km/s are expected with this new structure according to the theoretical results. To confirm the simulation results, SAW filters were processed on ZnO/AIN/diamond structure. First experimental results are in agreement with the theory and confirm the high potential of this new structure high-performance and high-frequency SAW filters. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：1175 / 1178
页数：4
相关论文
共 16 条
[1]   Synthesis and microstructural characterisation of reactive RF magnetron sputtering AlN films for surface acoustic wave filters [J].
Assouar, MB ;
El Hakiki, M ;
Elmazria, O ;
Alnot, P ;
Tiusan, C .
DIAMOND AND RELATED MATERIALS, 2004, 13 (4-8) :1111-1115
[2]   Structural morphological and acoustic properties of AlN thick films sputtered on Si(001) and Si(111) substrates at low temperature [J].
Caliendo, C ;
Imperatori, P ;
Cianci, E .
THIN SOLID FILMS, 2003, 441 (1-2) :32-37
[3]  
Campbell CK, 1998, ULTRASON, P169, DOI 10.1109/ULTSYM.1998.762124
[4]   A METHOD FOR ESTIMATING OPTIMAL CRYSTAL CUTS AND PROPAGATION DIRECTIONS FOR EXCITATION OF PIEZOELECTRIC SURFACE WAVES [J].
CAMPBELL, JJ ;
JONES, WR .
IEEE TRANSACTIONS ON SONICS AND ULTRASONICS, 1968, SU15 (04) :209-+
[5]  
Carlotti G., 1987, P IEEE ULTR S, P295
[6]  
ELHAKIKI M, 2003, P WORLD C ULTR WCU S, P1451
[7]   High velocity SAW using aluminum nitride film on unpolished nucleation side of free-standing CVD diamond [J].
Elmazria, O ;
Mortet, V ;
El Hakiki, M ;
Nesladek, M ;
Alnot, P .
IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL, 2003, 50 (06) :710-715
[8]   Growth mechanism of reactively sputtered aluminum nitride thin films [J].
Hwang, BH ;
Chen, CS ;
Lu, HY ;
Hsu, TC .
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 2002, 325 (1-2) :380-388
[9]   Hypersonic properties of nano- and microstructured CVD diamond [J].
Krüger, JK ;
Embs, JP ;
Lukas, S ;
Hartmann, U ;
Brierley, CJ ;
Beck, CM ;
Jimenez, R ;
Alnot, P .
DIAMOND AND RELATED MATERIALS, 2000, 9 (02) :123-128
[10]   Structural properties of AlN films grown on Si, Ru/Si and ZnO/Si substrates [J].
Lim, WT ;
Son, BK ;
Kang, DH ;
Lee, CH .
THIN SOLID FILMS, 2001, 382 (1-2) :56-60
12