Effects of titanium silicide on AuSiTi/n-GaN ohmic contact systems

被引：9

作者：

Kim, CY ^{[1
]}

Kim, SW

Hong, CH

Kim, DW

Baik, HK

Whang, CN

机构：

[1] LG Corp Inst Technol, Seocho Gu, Seoul 137140, South Korea

[2] Yonsei Univ, Dept Engn Met, Seodaemoon Gu, Seoul 120749, South Korea

[3] Yonsei Univ, Dept Phys, Seodaemoon Gu, Seoul 120749, South Korea

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 189卷

关键词：

ohmic contact; AuSiTi/n-GaN system; titanium silicide; low work function; low barrier model; abrupt interface;

D O I：

10.1016/S0022-0248(98)00270-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Si embedded AuTi/n-GaN contact schemes have been developed for a low barrier ohmic contact to n-GaN. Contacts subjected to rapid thermal annealing temperature from 400 to 900 degrees C for 10 s exhibited linear current-voltage characteristics and had low specific contact resistance of mid-10(-5) Omega cm(2) above 700 degrees C. XRD, AES, and TEM experiments show that TiSix (x = 1 and 2) layer was formed at the metal/GaN interface above 500 degrees C and the contact interface was abrupt. Ohmic contact was related to the formation of TiSix, with a low work function (3.94-3.99 eV in case of TiSi). (C) 1998 Published by Elsevier Science B.V, All rights reserved.

引用

页码：720 / 724

页数：5

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