WIDEGAP COLUMN-III NITRIDE SEMICONDUCTORS FOR UV/BLUE LIGHT-EMITTING DEVICES

被引：141

作者：

AKASAKI, I

AMANO, H

机构：

[1] Department of Electrical and Electronic Engineering, Meijo University, Tempaku-ku

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1994年 / 141卷 / 08期

关键词：

D O I：

10.1149/1.2055104

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

This paper reports on a high-quality AlGaN/GaN double heterostructure (DH) which shows UV emission stimulated by optical pumping at room temperature with low threshold power in both edge and surface modes, and a high-efficiency blue light emitting diode (LED) and UV-LED based on p-n GaN homojunction and AlGaN/GaN DH. The process for the fabrication of LEDs and DH and their characteristics are presented.

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页码：2266 / 2271

页数：6

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