Bending-stress-driven phase transitions in pentacene thin films for flexible organic field-effect transistors

被引：75

作者：

Yang, Chanwoo ^{[1
]}

Yoon, Jinhwan ^{[2
,3
]}

Kim, Se Hyun ^{[1
]}

Hong, Kipyo ^{[1
]}

Chung, Dae Sung ^{[1
]}

Heo, Kyuyoung ^{[2
,3
]}

Park, Chan Eon ^{[1
]}

Ree, Moonhor ^{[2
,3
]}

机构：

[1] Pohang Univ Sci & Technol, Dept Chem Engn, POSTECH Organ Elect Lab, Pohang 790784, South Korea

[2] Pohang Univ Sci & Technol, Dept Chem, Natl Res Lab Polymer Synth Phys, Pohang 790784, South Korea

[3] Pohang Univ Sci & Technol, Dept Chem, Ctr Integrated Mol Syst, Pohang 790784, South Korea

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 24期

关键词：

D O I：

10.1063/1.2948862

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of bending strain on the structure and electrical characteristics of pentacene films in flexible devices were investigated. It was found that the volume fraction of bulk phase in the pentacene film increases from 10.7% to 27.7% under 1.1% of tensile strain but decreases to 3.5% under 1.0% of compressive strain. These bending-stress-driven phase transitions between the bulk phase and the thin-film phase in the pentacene film resulted in the changes in field-effect mobility, and were driven by the differences between the in-plane dimensions of the crystal unit cells of the two phases to reduce the external bending stress. (c) 2008 American Institute of Physics.

引用

页数：3

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