Silicon substrate integrated high Q-factor parallel-plate ferroelectric varactors for microwave/millimeterwave applications

被引：165

作者：

Vorobiev, A ^{[1
]}

Rundqvist, P

Khamchane, K

Gevorgian, S

机构：

[1] Chalmers Univ Technol, Dept Microtechnol & Nanosci, SE-41296 Gothenburg, Sweden

[2] Ericsson AB, High Speed Elect Res Ctr, S-43184 Molndal, Sweden

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 15期

关键词：

D O I：

10.1063/1.1619213

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Parallel-plate Ba0.25Sr0.75TiO3 (BST) varactors with a record high Q factor are fabricated on Si substrate. At 45 GHz the Q factor is about 40, and the tuneability at 25 V is more than 40% in the measured frequency range 0.045-45 GHz. The improvement in the Q factor is achieved by using a thick bottom electrode consisting of Pt (50 nm)/Au (0.5 mum) allowing us to reduce the microwave losses associated with metal layers. The BST films exhibit relatively high permittivity (150) at zero bias and high resistivity (10(10) Omega cm) at fields up to 700 kV/cm. (C) 2003 American Institute of Physics.

引用

页码：3144 / 3146

页数：3

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