Low-temperature polycrystalline silicon thin film transistor flash memory with ferritin

被引：9

作者：

Ichikawa, Kazunori

Uraoka, Yukiharu

Punchaipetch, Prakaipetch

Yano, Hiroshi

Hatayama, Tomoaki

Fuyuki, Takashi

Yamashita, Ichiro

机构：

[1] Nara Inst Sci & Technol, Nara 6300192, Japan

[2] Matsushita Elect Ind Co Ltd, Adv Technol Res Labs, Kyoto 6190237, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2007年 / 46卷 / 33-35期

关键词：

nanodots; ferritin; floating gate; flash memory; thin film transistor (TFT); bio-nano-process; system-on-panel (SOP);

D O I：

10.1143/JJAP.46.L804

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low-temperature polycrystalline silicon (poly-Si) thin film transistor (LTPS-TFT) flash memory is a potential candidate key component of system-on-panet (SOP). We have proposed the "bio-nano-process" for the fabrication of nanodots using biotechnology. In this study, we have successfully fabricated and developed LTPS-TFT flash memory with biomineralized inorganic nanodots for the first time. High-density homogeneous nanodots were made to adsorb on a silicon film using ferritin protein without the use of vacuum systems at high temperature. Electron charging and discharging in the dots were clearly confirmed from the transient behavior of the transfer curve at room temperature. This fabrication technique is promising for the development of flash memory for SOP.

引用

页码：L804 / L806

页数：3

共 7 条

[1]

Hara A., 2001, P INT WORKSH ACT MAT, P227

[2] Electron confinement in a metal nanodot monolayer embedded in silicon dioxide produced using ferritin protein [J].

Hikono, T ;

Matsumura, T ;

Miura, A ;

Uraoka, Y ;

Fuyuki, T ;

Takeguchi, M ;

Yoshii, S ;

Yamashita, I .

APPLIED PHYSICS LETTERS, 2006, 88 (02) :1-3

[3] Electrostatic placement of single ferritin molecules [J].

Kumagai, S ;

Yoshii, S ;

Yamada, K ;

Matsukawa, N ;

Fujiwara, I ;

Iwahori, K ;

Yamashita, I .

APPLIED PHYSICS LETTERS, 2006, 88 (15)

[4]

KUO PY, 2007, 3 INT TFT C P, P17

[5] Floating nanodot gate memory devices based on biomineralized inorganic nanodot array as a storage node [J].

Miura, A ;

Hikono, T ;

Matsumura, T ;

Yano, H ;

Hatayama, T ;

Uraoka, Y ;

Fuyuki, T ;

Yoshii, S ;

Yamashita, I .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2006, 45 (1-3) :L1-L3

[6] Single charge and confinement effects in nano-crystal memories [J].

Tiwari, S ;

Rana, F ;

Chan, K ;

Shi, L ;

Hanafi, H .

APPLIED PHYSICS LETTERS, 1996, 69 (09) :1232-1234

[7] Floating gate metal-oxide-semiconductor capacitor employing array of high-density nanodots produced by protein supramolecule [J].

Yamada, Kiyohito ;

Yoshii, Shigeo ;

Kumagai, Shinya ;

Miura, Atsushi ;

Uraoka, Yukiharu ;

Fuyuki, Takashi ;

Yamashita, Ichiro .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (11) :8946-8951

← 1 →