Transport through a nine period silicon/oxygen superlattice

The silicon/adsorbed oxygen superlattice was introduced as an epitaxial barrier for silicon quantum devices. A barrier height of similar to0.5 eV with a thin layer of silicon sandwiched between two adsorbed oxygen layers has been achieved. This work describes a similar structure with nine periods which may serve as a replacement of the present amorphous silicon dioxide gate for metal oxide semiconductor field effect transistor. The insulating property derived from our current-voltage (I-V) and conductance-voltage (G-V) measurements indicates that the scheme may serve as a replacement of silicon on insulator. (C) 2001 American Institute of Physics.