SILICON-BASED QUANTUM-WELLS

[1] RESONANT TUNNELING TRANSISTOR WITH QUANTUM WELL BASE AND HIGH-ENERGY INJECTION - A NEW NEGATIVE DIFFERENTIAL RESISTANCE DEVICE [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) : 1366 - 1368

[2] Capasso F., 1990, PHYS QUANTUM ELECT D, P181, DOI [10.1007/978-3-642-74751-9_7, DOI 10.1007/978-3-642-74751-9_7]

[3] RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS [J]. APPLIED PHYSICS LETTERS, 1974, 24 (12) : 593 - 595

[4] OBSERVATION OF QUANTUM CONFINEMENT EFFECTS IN STRAINED SI0.84GE0.16/SI QUANTUM-WELLS AT ROOM-TEMPERATURE [J]. APPLIED PHYSICS LETTERS, 1993, 62 (21) : 2713 - 2715

[5] DEFECTS IN EPITAXIAL MULTILAYERS .3. PREPARATION OF ALMOST PERFECT MULTILAYERS [J]. JOURNAL OF CRYSTAL GROWTH, 1976, 32 (02) : 265 - 273

[6] STRAINED-LAYER SUPER-LATTICES FROM LATTICE MISMATCHED MATERIALS [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) : 1586 - 1589

[7] GROWTH AND CHARACTERIZATION OF EPITAXIAL SILICON ON HETEROEPITAXIAL CAF2/SI(111) STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (11) : 6296 - 6300

[8] TUNNELING IN A FINITE SUPERLATTICE [J]. APPLIED PHYSICS LETTERS, 1973, 22 (11) : 562 - 564

[9] TSU R, IN PRESS PHYSICA B

[10] TSU R, 1963, Patent No. 5216262

[1] RESONANT TUNNELING TRANSISTOR WITH QUANTUM WELL BASE AND HIGH-ENERGY INJECTION - A NEW NEGATIVE DIFFERENTIAL RESISTANCE DEVICE [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) : 1366 - 1368

[2] Capasso F., 1990, PHYS QUANTUM ELECT D, P181, DOI [10.1007/978-3-642-74751-9_7, DOI 10.1007/978-3-642-74751-9_7]

[3] RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS [J]. APPLIED PHYSICS LETTERS, 1974, 24 (12) : 593 - 595

[4] OBSERVATION OF QUANTUM CONFINEMENT EFFECTS IN STRAINED SI0.84GE0.16/SI QUANTUM-WELLS AT ROOM-TEMPERATURE [J]. APPLIED PHYSICS LETTERS, 1993, 62 (21) : 2713 - 2715

[5] DEFECTS IN EPITAXIAL MULTILAYERS .3. PREPARATION OF ALMOST PERFECT MULTILAYERS [J]. JOURNAL OF CRYSTAL GROWTH, 1976, 32 (02) : 265 - 273

[6] STRAINED-LAYER SUPER-LATTICES FROM LATTICE MISMATCHED MATERIALS [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) : 1586 - 1589

[7] GROWTH AND CHARACTERIZATION OF EPITAXIAL SILICON ON HETEROEPITAXIAL CAF2/SI(111) STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (11) : 6296 - 6300

[8] TUNNELING IN A FINITE SUPERLATTICE [J]. APPLIED PHYSICS LETTERS, 1973, 22 (11) : 562 - 564

[9] TSU R, IN PRESS PHYSICA B

[10] TSU R, 1963, Patent No. 5216262