GROWTH AND CHARACTERIZATION OF EPITAXIAL SILICON ON HETEROEPITAXIAL CAF2/SI(111) STRUCTURES

被引：11

作者：

SINHAROY, S

GREGGI, J

SCHMIDT, DN

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 11期

关键词：

D O I：

10.1063/1.342088

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：6296 / 6300

页数：5

共 44 条

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[9] HETEROEPITAXY OF SEMICONDUCTOR-ON-INSULATOR STRUCTURES - SI AND GE ON CAF2/SI(111) [J].

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[10]

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