Low-frequency 1/f noise model for short-channel LDD MOSFETs

In this paper, we present a physics-based, and analytical above-threshold low frequency 1/f noise model for short-channel LDD MOSFETs operated both in the triode and pentode modes. We first develop an I-V model for LDD MOSFETs. The model was based on the quasi-two-dimensional Poisson equation and is a charge control model, expressed as a function of inversion charge density. The channel-length modulation was solved by using the quasi 2D approach and which was incorporated into the drain current equation. The parasitic source/drain resistance, the mobility reduction due to the transverse field, and the carrier velocity saturation have also been taker, into consideration. Then the 1/f drain current noise model was developed on the basis of oxide-trap-induced carrier number and surface mobility fluctuations; The I-V and 1/f noise models were successfully applied to submicron LDD nMOSFETs and a good agreement between the modeled and experimental data was obtained. (C) 1998 Elsevier Science Ltd. All rights reserved.