RANDOM TELEGRAPH SIGNALS ARISING FROM FAST INTERFACE STATES IN METAL-SIO2-SI TRANSISTORS

被引：27

作者：

TSAI, MH ^{[1
]}

MUTO, H ^{[1
]}

MA, TP ^{[1
]}

机构：

[1] YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 14期

关键词：

D O I：

10.1063/1.108453

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using fast sampling rates, we have been able to resolve random telegraph signals (RTSs) associated with trapping-detrapping of channel electrons by individual fast interface states in small metal-SiO2-Si transistors. Possible reasons why such fast RTSs have not been reported in the past are suggested. Some characteristics of the RTSs arising from fast interface states are presented and compared with those from the slow traps.

引用

页码：1691 / 1693

页数：3

共 6 条

[1] NOISE IN SOLID-STATE MICROSTRUCTURES - A NEW PERSPECTIVE ON INDIVIDUAL DEFECTS, INTERFACE STATES AND LOW-FREQUENCY (1/F) NOISE
KIRTON, MJ
UREN, MJ
[J]. ADVANCES IN PHYSICS, 1989, 38 (04) : 367 - 468
[2] KIRTON MJ, 1988, PHYSICS TECHNOLOGY A, P341
[3] RANDOM TELEGRAPH SIGNALS IN SMALL MOSFETS AFTER X-RAY-IRRADIATION
MUTO, H
TSAI, MH
MA, TP
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1991, 38 (06) : 1116 - 1123
[4] NICOLLIAN EH, 1982, MOS PHYSICS TECHNOLO
[5] SINGLE, INDIVIDUAL TRAPS IN MOSFETS
SCHULZ, M
KARMANN, A
[J]. PHYSICA SCRIPTA, 1991, T35 : 273 - 280
[6] INDIVIDUAL, ATTRACTIVE DEFECT CENTERS IN THE SIO2-SI INTERFACE OF MU-M-SIZED MOSFETS
SCHULZ, M
KARMANN, A
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1991, 52 (02): : 104 - 111

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