Diameter-controlled growth of In2O3 nanowires on the surfaces of indium grains

被引：23

作者：

Dong, Hongxing ^{[1
]}

Yang, Heqing ^{[1
]}

Yang, Wenyu ^{[1
]}

Yin, Wenyan ^{[1
]}

Chen, Dichun ^{[2
]}

机构：

[1] Shaanxi Normal Univ, Sch Chem & Mat Sci, Key Lab Macromol Sci Shaanxi Province, Xian 710062, Peoples R China

[2] Xian Univ Technol, Adv Mat Anal & Test Ctr, Xian 710048, Peoples R China

来源：

MATERIALS CHEMISTRY AND PHYSICS | 2008年 / 107卷 / 01期

基金：

中国国家自然科学基金;

关键词：

oxides; crystal growth; Raman spectroscopy and scattering;

D O I：

10.1016/j.matchemphys.2007.06.054

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In2O3 nanowires have been synthesized on a large-area surface by direct thermal oxidation of indium grains coated with an An film at 700-850 degrees C under the flow of O-2. The indium grains were used as both a reagent and a substrate for the growth of In2O3 nanowires. The as-synthesized In2O3 nanowires were characterized by transmission electron microscopy, scanning electron microscopy and Raman spectrum. It was found that the In2O3 nanowires were a polycrystalline with the body centered cubic structure and had a controllable diameter in the range of 60-250 nm with lengths of up to 10 mu m by varying the heating temperature. A possible mechanism was also proposed to account for the growth of these In2O3 nanowires. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：122 / 126

页数：5

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