Fabrication and characterization of In2O3 nanowires

被引:93
作者
Dai, L
Chen, XL
Jian, JK
He, M
Zhou, T
Hu, BQ
机构
[1] Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China
[2] Chinese Acad Sci, Ctr Condensed Matter Phys, Beijing 100080, Peoples R China
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2002年 / 75卷 / 06期
关键词
D O I
10.1007/s00339-002-1475-8
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
IN2O3 nanowires were successfully fabricated through a simple gas-reaction route in argon atmosphere. These nanowires have diameters ranging from 20 nm to 50 nm and lengths up to tens of micrometers. High-resolution transmission electron microscopy observations and the electron-diffraction (ED) pattern reveal that the In2O3 nanowires are formed by the stacking of ((2) over bar2 (2) over bar) planes along the [(1) over bar1 (1) over bar] direction, which is parallel to the wire axis. A strong and wide ultraviolet (UV) emission band centered at around 392 nm is observed for the first time in the room-temperature photoluminescence measurement in addition to the usual blue emission (468 nm). Moreover, five discrete fine peaks (372 nm, 383 nm, 406 nm, 392 nm and 413 nm) are further identified in this broad UV band.
引用
收藏
页码:687 / 689
页数:3
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