Morphological stability of a nanowire during growth process

被引:17
作者
Chen, XL
Li, JY
Lan, YC
Cao, YG
机构
[1] Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China
[2] Chinese Acad Sci, Ctr Condensed Matter Phys, Beijing 100080, Peoples R China
[3] Univ Sci & Technol Beijing, Dept Phys Chem, Beijing 100083, Peoples R China
来源
MODERN PHYSICS LETTERS B | 2001年 / 15卷 / 01期
基金
中国国家自然科学基金;
关键词
D O I
10.1142/S0217984901001495
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this letter, we analyze the morphological stability of a nanowire during the vapor-solid (VS) side growth process at the same time as it grows along its axial direction by the vapor-liquid-solid (VLS) mechanism. The longitudinal perturbations due to the fluctuations of the growth conditions are introduced to describe the morphological variance of a nanowire along its fibre direction. It is shown that the side growth can induce the morphological instability for a nanowire with side perturbations if the perturbation's wavelengths are larger than a nanowire's perimeter.
引用
收藏
页码:27 / 31
页数:5
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