Influence of the surface morphology on the yellow and "edge" emissions in wurtzite GaN

被引：38

作者：

Godlewski, M

Goldys, EM

Phillips, MR

Langer, R

Barski, A

机构：

[1] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

[2] Macquarie Univ, Semicond Sci & Technol Lab, N Ryde, NSW 2109, Australia

[3] Univ Technol Sydney, Microstruct Anal Unit, Sydney, NSW, Australia

[4] CEA Grenoble, DRFMC SP2M, F-38054 Grenoble, France

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 25期

关键词：

D O I：

10.1063/1.122863

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter we examine an influence of surface morphology on yellow and edge emissions in wurtzite phase GaN. Our cathodoluminescence measurements show that the yellow emission does not correlate with the surface morphology, but simultaneously the "edge" emission shows very strong spatial fluctuations. The observed effect is attributed to granular structures in GaN films and enhancement of the yellow emission in the interface region. (C) 1998 American Institute of Physics. [S00003-6951(98)00751-7].

引用

页码：3686 / 3688

页数：3

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