Depth-resolved and excitation power dependent cathodoluminescence study of GaN films grown by metalorganic chemical vapor deposition

被引：52

作者：

Li, X

Coleman, JJ

机构：

[1] Microelectronics Laboratory, University of Illinois, Urbana

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 04期

关键词：

D O I：

10.1063/1.118174

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied the luminescence properties of GaN films grown by metalorganic chemical vapor deposition using depth-resolved and excitation power dependent cathodoluminescence spectroscopy. In the thickness range we studied (similar to 3 mu m), the luminescence properties, measured by the ratio of band-edge emission to the yellow band intensity, improve as the layer thickness increases. (C) 1997 American Institute of Physics.

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页码：438 / 440

页数：3

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