Cathodoluminescence study of GaN epitaxial layers

被引：26

作者：

Cremades, A

Piqueras, J

Xavier, C

Monteiro, T

Pereira, E

Meyer, BK

Hofmann, DM

Fischer, S

机构：

[1] UNIV AVEIRO, DEPT FIS, P-3800 AVEIRO, PORTUGAL

[2] TECH UNIV MUNICH, PHYS DEPT E16, D-85747 GARCHING, GERMANY

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1996年 / 42卷 / 1-3期

关键词：

cathodoluminescence; photoluminescence; scanning electron microscopy;

D O I：

10.1016/S0921-5107(96)01712-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

GaN epitaxial layers have been investigated by cathodoluminescence (CL) in the scanning electron microscope (SEM). The most prominent feature of the spectra is a complex band at 2.2 eV, whose evolution with temperature and excitation density suggests emission mechanisms involving a deep center and donor-donor or donor-acceptor pairs. Time resolved photoluminescence (TRPL) measurements confirm the involvement of a deep center in the emission. CL images reveal that the centers responsible for this emission decorate grain boundaries. Emission bands al 2.87 eV and 1.31 eV have been also detected in the films.

引用

页码：230 / 234

页数：5

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