Electron Mobility in Surface- and Buried-Channel Flatband In0.53Ga0.47As MOSFETs With ALD Al2O3 Gate Dielectric

被引：36

作者：

Bentley, Steven J. ^{[1
]}

Holland, Martin ^{[1
]}

Li, Xu ^{[1
]}

Paterson, Gary W. ^{[1
]}

Zhou, Haiping ^{[1
]}

Ignatova, Olesya ^{[1
]}

Macintyre, Douglas ^{[1
]}

Thoms, Stephen ^{[1
]}

Asenov, Asen ^{[1
]}

Shin, Byungha ^{[2
]}

Ahn, Jaesoo ^{[2
]}

McIntyre, Paul C. ^{[2
]}

Thayne, Iain G. ^{[1
]}

机构：

[1] Univ Glasgow, Nanoelect Res Ctr, Sch Engn, Glasgow G12 8QQ, Lanark, Scotland

[2] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 04期

基金：

英国工程与自然科学研究理事会;

关键词：

Atomic layer deposition (ALD); electron mobility; InGaAs; MOSFET;

D O I：

10.1109/LED.2011.2107876

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we investigate the scaling potential of flatband III-V MOSFETs by comparing the mobility of surface- and buried-channel In0.53Ga0.47 As devices employing an atomic-layer-deposited Al2O3 gate dielectric and a delta-doped InGaAs/InAlAs/InP heterostructure. Peak electron mobilities of 4300 cm(2)/V . s and 6600 cm(2)/V . s at a carrier density of 3 x 10(12) cm(-2) were determined for the surface-and buried-channel structures, respectively. In contrast to similarly scaled inversion-channel devices, we find that the mobility in surface-channel flatband structures does not drop rapidly with the electron density, but rather high mobility is maintained up to carrier concentrations around 4 x 10(12) cm(-2) before slowly dropping to around 2000 cm(2)/V . s at 1 x 10(13) cm(-2). We believe these to be world leading metrics for this material system and an important development in informing the III-V MOSFET device architecture selection process for the future low-power highly scaled CMOS.

引用

页码：494 / 496

页数：3

共 12 条

[1] Small-Signal Response of Inversion Layers in High-Mobility In0.53Ga0.47As MOSFETs Made With Thin High-κ Dielectrics [J].

Ali, Ashkar ;

Madan, Himanshu ;

Koveshnikov, Sergei ;

Oktyabrsky, Serge ;

Kambhampati, Rama ;

Heeg, Tassilo ;

Schlom, Darrell ;

Datta, Suman .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2010, 57 (04) :742-748

[2] Enhancement-mode GaAs MOSFETs with an In0.3Ga0.7As channel, a mobility of over 5000 cm2/V•s, and transconductance of over 475 μS/μm [J].

Hill, Richard J. W. ;

Moran, David A. J. ;

Li, Xu ;

Zhou, Haiping ;

Macintyre, Douglas ;

Thoms, Stephen ;

Asenov, Asen ;

Zurcher, Peter ;

Rajagopalan, Karthik ;

Abrokwah, Jonathan ;

Droopad, Ravi ;

Passlack, Matthias ;

Thayne, Lain G. .

IEEE ELECTRON DEVICE LETTERS, 2007, 28 (12) :1080-1082

[3]

Huang J., 2009, International Electron Device Meeting, P335

[4] 30-nm InAs PHEMTs With fT=644 GHz and fmax=681 GHz [J].

Kim, Dae-Hyun ;

del Alamo, Jesus A. .

IEEE ELECTRON DEVICE LETTERS, 2010, 31 (08) :806-808

[5] Border traps in Al2O3/In0.53Ga0.47As (100) gate stacks and their passivation by hydrogen anneals [J].

Kim, Eun Ji ;

Wang, Lingquan ;

Asbeck, Peter M. ;

Saraswat, Krishna C. ;

McIntyre, Paul C. .

APPLIED PHYSICS LETTERS, 2010, 96 (01)

[6] Atomically abrupt and unpinned Al2O3/In0.53Ga0.47As interfaces: Experiment and simulation [J].

Kim, Eun Ji ;

Chagarov, Evgueni ;

Cagnon, Joel ;

Yuan, Yu ;

Kummel, Andrew C. ;

Asbeck, Peter M. ;

Stemmer, Susanne ;

Saraswat, Krishna C. ;

McIntyre, Paul C. .

JOURNAL OF APPLIED PHYSICS, 2009, 106 (12)

[7] Exploring the ALD Al2O3/In0.53Ga0.47As and Al2O3/Ge interface properties: A common gate stack approach for advanced III-V/Ge CMOS [J].

Lin, D. ;

Waldron, N. ;

Brammertz, G. ;

Martens, K. ;

Wang, W. -E ;

Sioncke, S. ;

Delabie, A. ;

Bender, H. ;

Conard, T. ;

Tseng, W. H. ;

Lin, J. C. ;

Temst, K. ;

Vantomme, A. ;

Mitard, J. ;

Caymax, M. ;

Meuris, M. ;

Heyns, M. ;

Hoffmann, T. .

GRAPHENE, GE/III-V, AND EMERGING MATERIALS FOR POST-CMOS APPLICATIONS 2, 2010, 28 (05) :173-183

[8]

Radosavljevic M., 2009, IEEE Conference Proceedings of International Electron Devices Meeting (IEDM), P1

[9] Arsenic decapping and half cycle reactions during atomic layer deposition of Al2O3 on In0.53Ga0.47As(001) [J].

Shin, Byungha ;

Clemens, Jonathon B. ;

Kelly, Michael A. ;

Kummel, Andrew C. ;

McIntyre, Paul C. .

APPLIED PHYSICS LETTERS, 2010, 96 (25)

[10] Device design considerations for double-gate, ground-plane, and single-gated ultra-thin SOI MOSFET's at the 25 nm channel length generation [J].

Wong, HSP ;

Frank, DJ ;

Solomon, PM .

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST, 1998, :407-410

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