Small-Signal Response of Inversion Layers in High-Mobility In0.53Ga0.47As MOSFETs Made With Thin High-κ Dielectrics

被引：63

作者：

Ali, Ashkar ^{[1
]}

Madan, Himanshu ^{[1
]}

Koveshnikov, Sergei ^{[2
]}

Oktyabrsky, Serge ^{[3
]}

Kambhampati, Rama ^{[3
]}

Heeg, Tassilo ^{[4
]}

Schlom, Darrell ^{[5
]}

Datta, Suman ^{[1
]}

机构：

[1] Penn State Univ, Dept Elect Engn, University Pk, PA 16802 USA

[2] Intel Corp, Santa Clara, CA 95052 USA

[3] SUNY Albany, Albany, NY 12203 USA

[4] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA

[5] Cornell Univ, Ithaca, NY 14853 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2010年 / 57卷 / 04期

基金：

美国国家科学基金会;

关键词：

High-kappa dielectric; InGaAs; interface states; small-signal admittance modeling; split capacitance-voltage; MODE INGAAS MOSFET; EXTRACTION;

D O I：

10.1109/TED.2010.2041855

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ultrahigh-mobility compound semiconductor-based MOSFETs and quantum-well field-effect transistors could enable the next generation of logic transistors operating at low supply voltages since these materials exhibit excellent electron transport properties. While the long-channel In0.53Ga0.47As MOSFETs exhibit promising characteristics with unpinned Fermi level at the InGaAs-dielectric interface, the high-field channel mobility as well as subthreshold characteristics needs further improvement. In this paper, we present a comprehensive equivalent circuit model that accurately evaluates the experimental small-signal response of inversion layers in In0.53Ga0.47As MOSFETs fabricated with LaAlO3 gate dielectric and enables accurate extraction of the interface state profile, the trap dynamics, and the effective channel mobility.

引用

页码：742 / 748

页数：7

共 16 条

[1]

ALI A, 2009, P 67 DEV RES C, P55

[2]

[Anonymous], APPL PHYS LETT

[3] On the extraction of interface trap density in the Pt/La2O3/Ge gate stack and the determination of the charge neutrality level in Ge [J].

Bozyigit, D. ;

Rossel, C. .

JOURNAL OF APPLIED PHYSICS, 2009, 105 (12)

[4] Integrated nanoelectronics for the future [J].

Chau, Robert ;

Doyle, Brian ;

Datta, Suman ;

Kavalieros, Jack ;

Zhang, Kevin .

NATURE MATERIALS, 2007, 6 (11) :810-812

[5] A NEW AC TECHNIQUE FOR ACCURATE DETERMINATION OF CHANNEL CHARGE AND MOBILITY IN VERY THIN GATE MOSFETS [J].

CHOW, PMD ;

WANG, KL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (09) :1299-1304

[6] Ultrahigh-speed 0.5 V supply voltage In0.7Ga0.3As quantum-well transistors on silicon substrate [J].

Datta, Suman ;

Dewey, G. ;

Fastenau, J. M. ;

Hudait, M. K. ;

Loubychev, D. ;

Liu, W. K. ;

Radosavljevic, M. ;

Rachmady, W. ;

Chau, R. .

IEEE ELECTRON DEVICE LETTERS, 2007, 28 (08) :685-687

[7] Extraction of the Effective Mobility of In0.53Ga0.47As MOSFETs [J].

Hinkle, Christoper L. ;

Sonnet, Arif M. ;

Chapman, Richard A. ;

Vogel, Eric M. .

IEEE ELECTRON DEVICE LETTERS, 2009, 30 (04) :316-318

[8]

KOVESHNIKOV S, 2008, P 66 IEEE DEV RES C, P43

[9] On the correct extraction of interface trap density of MOS devices with high-mobility semiconductor substrates [J].

Martens, Koen ;

Chui, Chi On ;

Brammertz, Guy ;

De Jaeger, Brice ;

Kuzum, Duygu ;

Meuris, Marc ;

Heyns, Marc M. ;

Krishnamohan, Tejas ;

Saraswat, Krishna ;

Maes, Herman E. ;

Groeseneken, Guido .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (02) :547-556

[10]

Nicollian E. H., 2002, MOS METAL OXIDE SEMI

← 1 2 →