Extraction of the Effective Mobility of In0.53Ga0.47As MOSFETs

被引：40

作者：

Hinkle, Christoper L. ^{[1
]}

Sonnet, Arif M.

Chapman, Richard A.

Vogel, Eric M.

机构：

[1] Univ Texas Richardson, Dept Elect Engn, Richardson, TX 75080 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2009年 / 30卷 / 04期

关键词：

Effective mobility; InGaAs; interface states; split C-V; III-V metal-oxide-semiconductor field-effect transistor (MOSFET); MODEL; GAAS;

D O I：

10.1109/LED.2009.2012880

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The extraction of the effective mobility on In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors (MOSFETs) is studied and shown to be greater than 3600 cm(2)/V . s. The removal of C-it response in the split C-V measurement of these devices is crucial to the accurate analysis of these devices. Low-temperature split C-V can be used to freeze out the D-it response to the ac signal but maintain its effect on the free carrier density through the substrate potential. Simulations that match this low-temperature data can then be "warmed up" to room temperature and an accurate measure of Q(inv) is achieved. These results confirm the fundamental performance advantages of In0.53Ga0.47As MOSFETs.

引用

页码：316 / 318

页数：3

共 17 条

[1]

[Anonymous], PHYS SEMICONDUCTOR D

[2]

[Anonymous], APPL PHYS LETT

[3] Inversion mode n-channel GaAs field effect transistor with high-k/metal gate [J].

De Souza, J. P. ;

Kiewra, E. ;

Sun, Y. ;

Callegari, A. ;

Sadana, D. K. ;

Shahidi, G. ;

Webb, D. J. ;

Fompeyrine, J. ;

Germann, R. ;

Rossel, C. ;

Marchiori, C. .

APPLIED PHYSICS LETTERS, 2008, 92 (15)

[4] Enhancement-mode GaAs MOSFETs with an In0.3Ga0.7As channel, a mobility of over 5000 cm2/V•s, and transconductance of over 475 μS/μm [J].

Hill, Richard J. W. ;

Moran, David A. J. ;

Li, Xu ;

Zhou, Haiping ;

Macintyre, Douglas ;

Thoms, Stephen ;

Asenov, Asen ;

Zurcher, Peter ;

Rajagopalan, Karthik ;

Abrokwah, Jonathan ;

Droopad, Ravi ;

Passlack, Matthias ;

Thayne, Lain G. .

IEEE ELECTRON DEVICE LETTERS, 2007, 28 (12) :1080-1082

[5] Frequency dispersion reduction and bond conversion on n-type GaAs by in situ surface oxide removal and passivation [J].

Hinkle, C. L. ;

Sonnet, A. M. ;

Vogel, E. M. ;

McDonnell, S. ;

Hughes, G. J. ;

Milojevic, M. ;

Lee, B. ;

Aguirre-Tostado, F. S. ;

Choi, K. J. ;

Kim, J. ;

Wallace, R. M. .

APPLIED PHYSICS LETTERS, 2007, 91 (16)

[6]

Koveshnikov S., 2008, P DEV RES C SANT BAR

[7] Concentration and temperature-dependent low-field mobility model for In0.53Ga0.47As interdigitated lateral pin PD [J].

Menon, P. S. ;

Kandiah, K. ;

Shaari, S. .

IEICE ELECTRONICS EXPRESS, 2008, 5 (09) :303-309

[8] Self-aligned n-channel metal-oxide-semiconductor field effect transistor on high-indium-content In0.53Ga0.47As and InP using physical vapor deposition HfO2 and silicon interface passivation layer [J].

Ok, InJo ;

Kim, H. ;

Zhang, M. ;

Zhu, F. ;

Park, S. ;

Yum, J. ;

Zhao, H. ;

Garcia, Domingo ;

Majhi, Prashant ;

Goel, N. ;

Tsai, W. ;

Gaspe, C. K. ;

Santos, M. B. ;

Lee, Jack C. .

APPLIED PHYSICS LETTERS, 2008, 92 (20)

[9]

Passlack M, 2005, MATERIALS FUNDAMENTALS OF GATE DIELECTRICS, P403, DOI 10.1007/1-4020-3078-9_12

[10] Fabrication and analysis of deep submicron strained-Si N-MOSFET's [J].

Rim, KK ;

Hoyt, JL ;

Gibbons, JF .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2000, 47 (07) :1406-1415

← 1 2 →