Inversion mode n-channel GaAs field effect transistor with high-k/metal gate

被引：70

作者：

De Souza, J. P. ^{[1
]}

Kiewra, E. ^{[1
]}

Sun, Y. ^{[1
]}

Callegari, A. ^{[1
]}

Sadana, D. K. ^{[1
]}

Shahidi, G. ^{[1
]}

Webb, D. J. ^{[2
]}

Fompeyrine, J. ^{[2
]}

Germann, R. ^{[2
]}

Rossel, C. ^{[2
]}

Marchiori, C. ^{[2
]}

机构：

[1] IBM Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

[2] IBM Corp, Zurich Res Lab, CH-8803 Ruschlikon, Switzerland

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 15期

关键词：

D O I：

10.1063/1.2912027

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Highly effective passivation of GaAs surface is achieved by a thin amorphous Si (a-Si) cap, deposited by plasma enhanced chemical vapor deposition method. Capacitance voltage measurements show that carrier accumulation or inversion layer is readily formed in response to an applied electrical field when GaAs is passivated with a-Si. High performance inversion mode n-channel GaAs metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated with an a-Si/high-k/metal gate stack. Drain current in saturation region of 220 mA/mm with a mobility of 885 cm(2)/V s were obtained at a gate overdrive voltage of 3.25 V in MOSFETs with 5 mu m gate length. (C) 2008 American Institute of Physics.

引用

页数：2

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