1-μm enhancement mode GaAsN-channel MOSFETs with transconductance exceeding 250 mS/mm

被引：47

作者：

Rajagopalan, K. ^{[1
]}

Droopad, R. ^{[1
]}

Abrokwah, J. ^{[1
]}

Zurcher, P. ^{[1
]}

Fejes, P. ^{[1
]}

Passlack, M. ^{[1
]}

机构：

[1] Freescale Semicond Inc, Tempe, AZ 85284 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2007年 / 28卷 / 02期

关键词：

compound semiconductor; enhancement mode; GaAs; high-mobility channel; MOSFETs;

D O I：

10.1109/LED.2006.889502

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, 1-mu m GaAs-based enhancement-mode n-channel devices with channel mobility of 5500 cm(2)/V center dot s and g(m) exceeding 250 mS/mm have been fabricated. The measured device parameters including threshold voltage V-th, maximum extrinsic transconductance g(m), saturation current I-dss, on-resistance R-on, and gate current are 0.11 V, 254 mS/mm, 380 mA/mm, 4.5 Omega.mm, and <56 pA for a first wafer and 0.08 V, 229 mS/mm,,443 mA/mm, 4.5 Omega.mm, and <90 pA for a second wafer, respectively. With an intrinsic transconductance g(mi) of 434 mS/mm, GaAs enhancement-mode MOSFETs have reached expected intrinsic device performance.

引用

收藏

页码：100 / 102

页数：3

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