High mobility NMOSFET structure with high-k-dielectric

被引：65

作者：

Passlack, M ^{[1
]}

Droopad, R

Rajagopalan, K

Abrokwah, J

Gregory, R

Nguyen, D

机构：

[1] Freescale Semicond Inc, Tempe, AZ 85284 USA

[2] Lehighton Elect, Lehighton, PA 18235 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2005年 / 26卷 / 10期

关键词：

charge carrier mobility; high-k-dielectrics; MOSFETs;

D O I：

10.1109/LED.2005.856707

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-kappa. NMOSFET structures designed for enhancement mode operation have been fabricated with mobilities exceeding 6000 cm(2)/Vs. The NMOSFET structures which have been grown by molecular beam epitaxy on 3-in semi-insulating GaAs substrate comprise a 10 nm strained InGaAs channel layer and a high-kappa. dielectric layer (kappa congruent to 20). Electron mobilities of > 6000 and 3822 cm(2)/Vs have been measured for sheet carrier concentrations n(s) of 2-3 X 10(12) and congruent to 5.85 X 10(12) CM-2, respectively. Sheet resistivities as low as 280 Omega/sq. have been obtained.

引用

页码：713 / 715

页数：3

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