In0.75Ga0.25As channel layers with record mobility exceeding 12,000 cm2/Vs for use in high-κ dielectric NMOSFETs

被引：16

作者：

Droopad, Ravi ^{[1
]}

Rajagopalan, Karthik ^{[1
]}

Abrokwah, Jonathan ^{[1
]}

Canonico, Michael ^{[1
]}

Passlack, Matthias ^{[1
]}

机构：

[1] Freescale Semicond Inc, Tempe, AZ 85284 USA

来源：

SOLID-STATE ELECTRONICS | 2006年 / 50卷 / 7-8期

关键词：

MOSFETs; compound semiconductor; charge carrier mobility; high-kappa dielectrics;

D O I：

10.1016/j.sse.2006.05.017

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In0.75Ga0.25As channel layers with a record mobility exceeding 12,000 cm(2)/Vs for use in high-kappa dielectric NMOSFETs have been fabricated. The device structures which have been grown by molecular beam epitaxy on 3" semi-insulating InP substrate comprise a 10 nm strained In0.75Ga0.25M channel layer and a high-kappa oxide based dielectric layer (K congruent to 20). Electron mobilities of 12,033 and 7,042 cm(2)/Vs have been measured for sheet carrier concentrations n(s) of 2.5 x 10(12) and 6 x 10(12) cm(-2), respectively. (c) 2006 Elsevier Ltd. All rights reserved.

引用

页码：1175 / 1177

页数：3

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