GROWTH OF INAS-ALSB QUANTUM-WELLS HAVING BOTH HIGH MOBILITIES AND HIGH-CONCENTRATIONS

被引:67
作者
NGUYEN, C
BRAR, B
BOLOGNESI, CR
PEKARIK, JJ
KROEMER, H
ENGLISH, JH
机构
[1] Department of Electrical and Computer Engineering, University of California, Santa Barbara, 93106, CA
关键词
INAS-ALSB QUANTUM WELLS; INTERFACE ROUGHNESS; REFLECTION HIGH ENERGY ELECTRONIC DIFFRACTION (RHEED); TELLURIUM DOPING;
D O I
10.1007/BF02665035
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Low-temperature mobilities in InAs-AlSb quantum wells depend sensitively on the buffer layer structures. Reflection high energy electron diffraction and x-ray diffraction show that the highest crystalline quality and best InAs transport properties are obtained by a buffer layer sequence GaAs --> AlAs --> AlSb --> GaSb, with a final GaSb layer thickness of at least 1 mum. Using the improved buffer scheme, mobilities exceeding 600,000 cm2/Vs at 10 K are routinely obtained. Modulation delta-doping with tellurium has yielded electron sheet concentrations up to 8 x 10(12) cm-2 while maintaining mobilities approaching 100,000 cm2/Vs at low temperatures.
引用
收藏
页码:255 / 258
页数:4
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