GROWTH AND TRANSPORT-PROPERTIES OF (GA,AL)SB BARRIERS ON INAS

[1] GENERALIZED CURRENT AND CONDUCTANCE EXTREMA IN METAL-INSULATOR-SEMICONDUCTOR TUNNEL JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (13) : 5315 - &

[2] OBSERVATION OF NEGATIVE DIFFERENTIAL RESISTANCE FROM A SINGLE BARRIER HETEROSTRUCTURE [J]. APPLIED PHYSICS LETTERS, 1988, 52 (01) : 54 - 56

[3] NEW TYPE OF NEGATIVE RESISTANCE IN BARRIER TUNNELING [J]. PHYSICAL REVIEW LETTERS, 1966, 16 (24) : 1108 - &

[4] ELECTRONIC-ENERGY LEVELS IN GA1-XALXSB ALLOYS [J]. PHYSICAL REVIEW B, 1975, 12 (12): : 5846 - 5852

[5] DENSITIES AND MOBILITIES OF COEXISTING ELECTRONS AND HOLES IN GASB/INAS/GASB QUANTUM-WELLS [J]. SURFACE SCIENCE, 1986, 174 (1-3) : 449 - 453

[6] MUNEKATA H, 1987, J PHYS C S48, V5, P151

[7] NEW SEMICONDUCTOR SUPERLATTICE [J]. APPLIED PHYSICS LETTERS, 1977, 30 (12) : 651 - 653

[8] IN1-XGAXAS-GASB1-YASY HETEROJUNCTIONS BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1977, 31 (03) : 211 - 213

[9] MAGNETIC-FIELD-INDUCED TRANSITIONS IN INAS/GA1-XALXSB HETEROSTRUCTURES [J]. SURFACE SCIENCE, 1988, 196 (1-3) : 687 - 693

[10] OHMIC CONTACTS TO NORMAL-GAAS USING GRADED BAND-GAP LAYERS OF GA1-XINXAS GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 626 - 627

[1] GENERALIZED CURRENT AND CONDUCTANCE EXTREMA IN METAL-INSULATOR-SEMICONDUCTOR TUNNEL JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (13) : 5315 - &

[2] OBSERVATION OF NEGATIVE DIFFERENTIAL RESISTANCE FROM A SINGLE BARRIER HETEROSTRUCTURE [J]. APPLIED PHYSICS LETTERS, 1988, 52 (01) : 54 - 56

[3] NEW TYPE OF NEGATIVE RESISTANCE IN BARRIER TUNNELING [J]. PHYSICAL REVIEW LETTERS, 1966, 16 (24) : 1108 - &

[4] ELECTRONIC-ENERGY LEVELS IN GA1-XALXSB ALLOYS [J]. PHYSICAL REVIEW B, 1975, 12 (12): : 5846 - 5852

[5] DENSITIES AND MOBILITIES OF COEXISTING ELECTRONS AND HOLES IN GASB/INAS/GASB QUANTUM-WELLS [J]. SURFACE SCIENCE, 1986, 174 (1-3) : 449 - 453

[6] MUNEKATA H, 1987, J PHYS C S48, V5, P151

[7] NEW SEMICONDUCTOR SUPERLATTICE [J]. APPLIED PHYSICS LETTERS, 1977, 30 (12) : 651 - 653

[8] IN1-XGAXAS-GASB1-YASY HETEROJUNCTIONS BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1977, 31 (03) : 211 - 213

[9] MAGNETIC-FIELD-INDUCED TRANSITIONS IN INAS/GA1-XALXSB HETEROSTRUCTURES [J]. SURFACE SCIENCE, 1988, 196 (1-3) : 687 - 693

[10] OHMIC CONTACTS TO NORMAL-GAAS USING GRADED BAND-GAP LAYERS OF GA1-XINXAS GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 626 - 627