OHMIC CONTACTS TO NORMAL-GAAS USING GRADED BAND-GAP LAYERS OF GA1-XINXAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：169

作者：

WOODALL, JM

FREEOUF, JL

PETTIT, GD

JACKSON, TN

KIRCHNER, P

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 19卷 / 03期

关键词：

D O I：

10.1116/1.571074

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：626 / 627

页数：2

共 8 条

[1] SURFACE STATES AND BARRIER HEIGHT OF METAL-SEMICONDUCTOR SYSTEMS [J].

COWLEY, AM ;

SZE, SM .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) :3212-&

[2] SCHOTTKY-BARRIER HEIGHT OF N-INXGA1-XAS DIODES [J].

KAJIYAMA, K ;

MIZUSHIMA, Y ;

SAKATA, S .

APPLIED PHYSICS LETTERS, 1973, 23 (08) :458-459

[3] FERMI LEVEL POSITION AT SEMICONDUCTOR SURFACES [J].

MEAD, CA ;

SPITZER, WG .

PHYSICAL REVIEW LETTERS, 1963, 10 (11) :471-&

[4]

MEAD CA, 1964, PHYS REV, V134, pA173

[5]

Shockley W., 1964, ALTDR64207 AIR FORC

[6] UNIFIED MECHANISM FOR SCHOTTKY-BARRIER FORMATION AND III-V-OXIDE INTERFACE STATES [J].

SPICER, WE ;

LINDAU, I ;

SKEATH, P ;

SU, CY ;

CHYE, P .

PHYSICAL REVIEW LETTERS, 1980, 44 (06) :420-423

[7] ULTRA LOW RESISTANCE OHMIC CONTACTS TO N-GAAS [J].

STALL, R ;

WOOD, CEC ;

BOARD, K ;

EASTMAN, LF .

ELECTRONICS LETTERS, 1979, 15 (24) :800-801

[8]

Walpole J. N., 1971, Journal of Applied Physics, V42, P5609, DOI 10.1063/1.1659990

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