Mobility measurement and degradation mechanisms of MOSFETs made with ultrathin high-k dielectrics

被引：181

作者：

Zhu, WJ ^{[1
]}

Han, JP ^{[1
]}

Ma, TP ^{[1
]}

机构：

[1] Yale Univ, Dept Elect Engn, New Haven, CT 06520 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2004年 / 51卷 / 01期

关键词：

high-k dielectrics; mobility degradation; mobility measurement; MOSFETs;

D O I：

10.1109/TED.2003.821384

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Accurate measurements and degradation mechanisms of the channel mobility for MOSFETs with HfO2 as the gate dielectric have been systematically studied in this paper. The error in mobility extraction caused by a high density of interface traps for a MOSFET with high-k gate dielectric has been analyzed, and a new method to correct this error has been proposed. Other sources of error in mobility extraction, including channel resistance, gate leakage current, and contact resistance for a MOSFET with ultrathin high-k dielectric have also been investigated and reported in this paper. Based on the accurately measured channel mobility, we have analyzed the degradation mechanisms of channel mobility for a MOSFET with HfO2 as the gate dielectric. The mobility degradation due to Coulomb scatting arising from interface trapped charges, and that due to remote soft optical phonon scattering are discussed.

引用

页码：98 / 105

页数：8

共 34 条

[1] Impact of tunnel currents and channel resistance on the characterization of channel inversion layer charge and polysilicon-gate depletion of sub-20-Å gate oxide MOSFET's [J].