Enhancement-mode GaAs n-channel MOSFET

被引：51

作者：

Rajagopalan, Karthik ^{[1
]}

Abrokwah, Jonathan ^{[1
]}

Droopad, Ravi ^{[1
]}

Passlack, Matthias ^{[1
]}

机构：

[1] Freescale Semicond Inc, Tempe, AZ 85284 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2006年 / 27卷 / 12期

关键词：

compound semiconductor; enhancement model; GaAs; high-mobility channel; MOSFETs;

D O I：

10.1109/LED.2006.886319

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter introduces the first enhancement-mode GaAs n-channel MOSFETs with a high channel mobility and an unpinned Fermi level at the oxide/GaAs interface. The NMOS-FETs feature an In0.3Ga0.7As channel layer, a channel mobility of up to 6207 cm(2)/V (.) s, and a dielectric stack thickness of 13.1-18.7 nm. Enhancement-mode NMOSFETs with a gate length of 1 mu m, a source/drain spacing of 3 mu m, and a threshold voltage of 0.05 V show a saturation current, transconductance, ON-resistance, and subthreshold swing of 243 mA/mm, 81 mS/mm, 8.0 Omega (.) mm, and 162 mV/dec, respectively.

引用

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页码：959 / 962

页数：4

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