Self-aligned GaAs p-channel enhancement mode MOS heterostructure field-effect transistor

被引：76

作者：

Passlack, M ^{[1
]}

Abrokwah, JK

Droopad, R

Yu, ZY

Overgaard, C

Yi, SI

Hale, M

Sexton, J

Kummel, AC

机构：

[1] Motorola Inc, Semicond Prod Sector, Tempe, AZ 85284 USA

[2] Motorola Inc, Phys Sci Res Labs, Tempe, AZ 85284 USA

[3] Univ Calif San Diego, Dept Chem, La Jolla, CA 92093 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2002年 / 23卷 / 09期

关键词：

gallium alloys; indium alloys; MOSFETs; semiconductor device modeling; semiconductor heterojunctions; semiconductor-insulator interfaces;

D O I：

10.1109/LED.2002.802591

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Self-aligned GaAs enhancement mode MOS heterostructure field-effect transistors (MOS-HFET) have been successfully fabricated for the first time. The MOS devices employ a Ga2O3 gate oxide, an undoped Al0.75Ga0.25 As spacer layer, and undoped In0.2Ga0.8As as channel layer. The p-channel devices with a gate length of 0.6 mum exhibit a maximum do transconductance g(m) of 51 mS/mm which is an improvement of more than two orders of magnitude over previously reported results. With the demonstration of a complete process flow and 66% of theoretical performance, GaAs MOS technology has moved into the realm of reality.

引用

页码：508 / 510

页数：3

共 24 条

[1] Submicron P-channel (Al,Ga)As/(In,Ga)As HIGFET's [J].

Abrokwah, JK ;

Lucero, R ;

Hallmark, JA ;

Bernhardt, B .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1997, 44 (07) :1040-1045

[2]

ABROKWAH JK, 1993, P IEEE GAAS IC S, P127

[3] FIRST ANODIC-OXIDE GAAS MOSFETS BASED ON EASY TECHNOLOGICAL PROCESSES [J].

BAYRAKTAROGLU, B ;

KOHN, E ;

HARTNAGEL, HL .

ELECTRONICS LETTERS, 1976, 12 (02) :53-54

[4] GALLIUM ARSENIDE MOS TRANSISTORS [J].

BECKE, H ;

HALL, R ;

WHITE, J .

SOLID-STATE ELECTRONICS, 1965, 8 (10) :813-&

[5]

CALLEGARI A, 1989, APPL PHYS LETT, V54, P4

[6] IMPROVED ENHANCEMENT-DEPLETION GAAS MOSFET USING ANODIC OXIDE AS GATE INSULATOR [J].

COLQUHOUN, A ;

KOHN, E ;

HARTNAGEL, HL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (03) :375-376

[7]

Fountain G. G., 1989, International Electron Devices Meeting 1989. Technical Digest (Cat. No.89CH2637-7), P887, DOI 10.1109/IEDM.1989.74196

[8]

*GAT MOD INC, 1998, G PISCES IIB MAN

[9] GAAS INVERSION-TYPE MIS TRANSISTORS [J].

ITO, T ;

SAKAI, Y .

SOLID-STATE ELECTRONICS, 1974, 17 (07) :751-759

[10] PROPERTIES OF GAAS-AL2O3 AND INP-AL2O3 INTERFACES AND THE FABRICATION OF MIS FIELD-EFFECT TRANSISTORS [J].

KAMIMURA, K ;

SAKAI, Y .

THIN SOLID FILMS, 1979, 56 (1-2) :215-223

← 1 2 3 →