Self-aligned GaAs p-channel enhancement mode MOS heterostructure field-effect transistor

Self-aligned GaAs enhancement mode MOS heterostructure field-effect transistors (MOS-HFET) have been successfully fabricated for the first time. The MOS devices employ a Ga2O3 gate oxide, an undoped Al0.75Ga0.25 As spacer layer, and undoped In0.2Ga0.8As as channel layer. The p-channel devices with a gate length of 0.6 mum exhibit a maximum do transconductance g(m) of 51 mS/mm which is an improvement of more than two orders of magnitude over previously reported results. With the demonstration of a complete process flow and 66% of theoretical performance, GaAs MOS technology has moved into the realm of reality.