IMPROVED ENHANCEMENT-DEPLETION GAAS MOSFET USING ANODIC OXIDE AS GATE INSULATOR

被引：16

作者：

COLQUHOUN, A

KOHN, E

HARTNAGEL, HL

机构：

来源：

关键词：

D O I：

10.1109/T-ED.1978.19084

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：375 / 376

页数：2

共 6 条

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BECKE, H
HALL, R
WHITE, J
[J]. SOLID-STATE ELECTRONICS, 1965, 8 (10) : 813 - &
[2] ANODIC-OXIDATION OF GAAS IN MIXED SOLUTIONS OF GLYCOL AND WATER
HASEGAWA, H
HARTNAGEL, HL
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (05) : 713 - 723
[3] KOHN E, UNPUBLISHED
[4] KOHN E, 1976, 6TH EUR SOL STAT DEV
[5] DEPLETION-MODE GAAS MOS FET
LILE, DL
CLAWSON, AR
COLLINS, DA
[J]. APPLIED PHYSICS LETTERS, 1976, 29 (03) : 207 - 208
[6] WEISS B, 1976, 6TH INT S GAAS REL A, V33