Band offsets at the interfaces of GaAs(100) with GdxGa0.4-xO0.6 insulators

被引：35

作者：

Afanas'ev, VV

Stesmans, A

Passlack, M

Medendorp, N

机构：

[1] Univ Louvain, Dept Phys, B-3001 Louvain, Belgium

[2] Motorola Inc, Semicond Prod Sector, Tempe, AZ 85284 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 04期

关键词：

D O I：

10.1063/1.1771805

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electron energy band alignment in GaAs(100)/Ga2O3/GdxGa0.4-xO0.6 structures was determined using internal photoemission and photoconductivity measurements. Two band gap values associated with Ga2O3 (4.8 eV) and Gd2O3 (5.8 eV) subnetworks were revealed. They yield potential barriers between the GaAs valence band and the bottom of the Ga2O3 and Gd2O3 derived conduction bands of 2.2 and 2.9 eV, respectively. The corresponding conduction band offsets at the GaAs/oxide interface, 0.8 and 1.5 eV, indicate the possibility of significant reduction of electron injection in Gd-rich oxides. (C) 2004 American Institute of Physics.

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页码：597 / 599

页数：3

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