Passivation of GaAs using (Ga2O3)1-x(Gd2O3)x, 0≤x≤1.0 films

被引：77

作者：

Kwo, J ^{[1
]}

Murphy, DW ^{[1
]}

Hong, M ^{[1
]}

Opila, RL ^{[1
]}

Mannaerts, JP ^{[1
]}

Sergent, AM ^{[1
]}

Masaitis, RL ^{[1
]}

机构：

[1] Lucent Technol, Bell Labs, Murray Hill, NJ 07974 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 08期

关键词：

D O I：

10.1063/1.124614

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The Ga2O3(Gd2O3) dielectric film was previously discovered to passivate the GaAs surface effectively. We have investigated the systematic dependence of the dielectric properties of (Ga2O3)(1-x)(Gd2O3)(x) on the Gd (x) content. Our results show that pure Ga2O3 does not passivate GaAs. Films with x greater than or equal to 14% are electrically insulating with low leakage current and high electrical breakdown strength. Furthermore, a low interfacial density of states was attained in films with x greater than or equal to 14%. The results show the important role of Gd2O3 in the (Ga2O3)(1-x)(Gd2O3)(x) dielectric films for effective passivation of GaAs. (C) 1999 American Institute of Physics. [S0003-6951(99)04434-4].

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页码：1116 / 1118

页数：3

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