Structural properties of Ga2O3(Gd2O3)-GaAs interfaces

被引：30

作者：

Hong, M

Marcus, MA

Kwo, J

Mannaerts, JP

Sergent, AM

Chou, LJ

Hsieh, KC

Cheng, KY

机构：

[1] AT&T Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

[2] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1998年 / 16卷 / 03期

关键词：

D O I：

10.1116/1.590082

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ga2O3(Gd2O3)-GaAs heterostructures in situ fabricated using a multichamber ultrahigh vacuum (molecular beam epitaxy) system were studied by x-ray reflectivity measurement and high-resolution transmission electron microscopy. The oxide-GaAs interfaces were found to be very smooth with the roughness no more than 1 nm. Moreover, an interfacial roughness as small as one atomic layer of GaAs (0.33 nm) was observed using x-ray reflectivity. (C) 1998 American Vacuum Society.

引用

页码：1395 / 1397

页数：3

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