PROPERTIES OF SIO2/SI/GAAS STRUCTURES FORMED BY SOLID-PHASE EPITAXY OF AMORPHOUS SI ON GAAS

被引：49

作者：

CALLEGARI, A ^{[1
]}

SADANA, DK ^{[1
]}

BUCHANAN, DA ^{[1
]}

PACCAGNELLA, A ^{[1
]}

MARSHALL, ED ^{[1
]}

TISCHLER, MA ^{[1
]}

NORCOTT, M ^{[1
]}

机构：

[1] UNIV PADUA,DIPARTIMENTO ELETTR & INFORMAT,I-35131 PADUA,ITALY

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 22期

关键词：

D O I：

10.1063/1.104820

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have achieved solid phase epitaxy of thin amorphous Si layers on GaAs using in situ plasma processing and subsequent annealing. High-resolution transmission electron microscopy of the SiO2/Si/GaAs structure shows that a Si layer congruent-to 20 angstrom thick epitaxially crystallizes on GaAs after annealing at congruent-to 570-degrees-C in N2. Metal-oxide-semiconductor capacitors fabricated on these structures confirm the high quality of these interfaces. By comparing a high-frequency (100 kHz) capacitance-voltage curve with a quasi-static one, interface state densities as low as 4 X 10(12) eV-1/cm-2 were measured on both n- and p-type GaAs.

引用

页码：2540 / 2542

页数：3

共 6 条

[1]

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