INVERSION OF N-TYPE GAAS-SURFACES USING A SILICON-SILICON DIOXIDE INSULATOR STRUCTURE

被引：9

作者：

HATTANGADY, SV

FOUNTAIN, GG

VITKAVAGE, DJ

RUDDER, RA

MARKUNAS, RJ

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1989年 / 136卷 / 07期

关键词：

D O I：

10.1149/1.2097175

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

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页码：2070 / 2073

页数：4

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