ANODIC OXIDE-GAAS AND INP INTERFACE FORMATION

被引：56

作者：

GEIB, KM

WILMSEN, CW

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1980年 / 17卷 / 05期

关键词：

D O I：

10.1116/1.570645

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：952 / 957

页数：6

共 23 条

[1]

AZZAM RMA, 1977, OPTICAL POLARIMETRY, V122, P82

[2] INVESTIGATION OF ANODICALLY GROWN FILMS ON GAAS USING X-RAY PHOTOELECTRON-SPECTROSCOPY [J].

BREEZE, PA ;

HARTNAGEL, HL ;

SHERWOOD, PMA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (02) :454-461

[3] ASSESSMENT OF THE QUALITY OF ANODIC NATIVE OXIDES OF GAAS FOR MOS DEVICES [J].

BREEZE, PA ;

HARTNAGEL, HL .

THIN SOLID FILMS, 1979, 56 (1-2) :51-61

[4] ANODIC OXIDE ON GAAS - QUANTITATIVE CHEMICAL DEPTH PROFILES OBTAINED USING AUGER-SPECTROSCOPY AND NEUTRON-ACTIVATION ANALYSIS [J].

CHANG, CC ;

SCHWARTZ, B ;

MURARKA, SP .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (06) :922-926

[5] MECHANISM OF GAAS ANODIZATION [J].

COLEMAN, DJ ;

SHAW, DW ;

DOBROTT, RD .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (02) :239-241

[6] INFLUENCE OF CURRENT-DENSITY ON THE COMPOSITION OF GAAS ANODIC OXIDE-FILMS [J].

CROSET, M ;

DIAZ, J ;

DIEUMEGARD, D ;

MERCANDALLI, LM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (09) :1543-1547

[7] NEW ANODIC NATIVE OXIDE OF GAAS WITH IMPROVED DIELECTRIC AND INTERFACE PROPERTIES [J].

HASEGAWA, H ;

FORWARD, KE ;

HARTNAGEL, HL .

APPLIED PHYSICS LETTERS, 1975, 26 (10) :567-569

[8]

Kortum G., 1965, TREATISE ELECTROCHEM

[9] AN INP MIS DIODE [J].

LILE, DL ;

COLLINS, DA .

APPLIED PHYSICS LETTERS, 1976, 28 (09) :554-556

[10] QUANTITATIVE CHEMICAL DEPTH PROFILES OF ANODIC OXIDE ON GAAS OBTAINED BY X-RAY PHOTOELECTRON-SPECTROSCOPY [J].

MIZOKAWA, Y ;

IWASAKI, H ;

NISHITANI, R ;

NAKAMURA, S .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) :1370-1374

← 1 2 3 →