INVERSION OF N-TYPE GAAS-SURFACES USING A SILICON-SILICON DIOXIDE INSULATOR STRUCTURE

被引：9

作者：

HATTANGADY, SV

FOUNTAIN, GG

VITKAVAGE, DJ

RUDDER, RA

MARKUNAS, RJ

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1989年 / 136卷 / 07期

关键词：

D O I：

10.1149/1.2097175

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：2070 / 2073

页数：4

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共 18 条

[11] ELECTRICAL-PROPERTIES OF GALLIUM ARSENIDE-INSULATOR INTERFACE
MEINERS, LG
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1402 - 1407
[12] REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION OF EPITAXIAL GE FILMS
RUDDER, RA
FOUNTAIN, GG
MARKUNAS, RJ
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (10) : 3519 - 3522
[13] ELECTRICAL-PROPERTIES OF PLASMA-DEPOSITED POLYSILOXANE AND METAL PLASMA POLYSILOXANE GAAS STRUCTURES
SEGUI, Y
MONTALAN, D
MORET, B
[J]. THIN SOLID FILMS, 1984, 120 (01) : 37 - 45
[14] STUDY OF N-GAAS MOS DIODES WITH SPIN-ON SIO2 LAYER
SENGUPTA, D
KUMAR, V
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 73 (02): : K279 - K282
[15] EFFECT OF NATIVE OXIDE ON INTERFACE PROPERTY OF GAAS MIS STRUCTURES
SUZUKI, N
HARIU, T
SHIBATA, Y
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (08) : 761 - 762
[16] UNPINNED GAAS MOS CAPACITORS AND TRANSISTORS
TIWARI, S
WRIGHT, SL
BATEY, J
[J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (09) : 488 - 490
[17] SELF-TERMINATING THERMAL-OXIDATION OF AIAS EPILAYERS GROWN ON GAAS BY MOLECULAR-BEAM EPITAXY
TSANG, WT
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (05) : 426 - 429
[18] GATING OF GERMANIUM SURFACES USING PSEUDOMORPHIC SILICON INTERLAYERS
VITKAVAGE, DJ
FOUNTAIN, GG
RUDDER, RA
HATTANGADY, SV
MARKUNAS, RJ
[J]. APPLIED PHYSICS LETTERS, 1988, 53 (08) : 692 - 694