GATING OF GERMANIUM SURFACES USING PSEUDOMORPHIC SILICON INTERLAYERS

被引：16

作者：

VITKAVAGE, DJ ^{[1
]}

FOUNTAIN, GG ^{[1
]}

RUDDER, RA ^{[1
]}

HATTANGADY, SV ^{[1
]}

MARKUNAS, RJ ^{[1
]}

机构：

[1] RES TRIANGLE INST,RES TRIANGLE PK,NC 27709

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 08期

关键词：

D O I：

10.1063/1.100642

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：692 / 694

页数：3

共 10 条

[1] GROWTH OF AMORPHOUS-GERMANIUM NITRIDE FILMS BY INDIRECT-PLASMA ENHANCED CVD [J].

ALFORD, DB ;

MEINERS, LG .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (04) :979-980

[2] INVERSION-LAYERS ON GERMANIUM WITH LOW-TEMPERATURE-DEPOSITED ALUMINUM-PHOSPHORUS OXIDE DIELECTRIC FILMS [J].

CHANG, RPH ;

FIORY, AT .

APPLIED PHYSICS LETTERS, 1986, 49 (22) :1534-1536

[3] LOW INTERFACE STATE DENSITY SIO2 DEPOSITED AT 300-DEGREES-C BY REMOTE PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION ON RECONSTRUCTED SI SURFACES [J].

FOUNTAIN, GG ;

RUDDER, RA ;

HATTANGADY, SV ;

MARKUNAS, RJ ;

LINDORME, PS .

JOURNAL OF APPLIED PHYSICS, 1988, 63 (09) :4744-4746

[4]

Nicollian E. H., 1982, METAL OXIDE SEMICOND

[5] REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION OF EPITAXIAL GE FILMS [J].

RUDDER, RA ;

FOUNTAIN, GG ;

MARKUNAS, RJ .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (10) :3519-3522

[6] DOMINANT SURFACE ELECTRONIC PROPERTIES OF SIO2-PASSIVATED GE SURFACES AS A FUNCTION OF VARIOUS ANNEALING TREATMENTS [J].

SEDGWICK, TO .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (11) :5066-+

[7]

WANG KL, 1976, J ELECTROCHEM SOC, V123, P1392, DOI 10.1149/1.2133083

[8] SOME PROPERTIES OF VAPOR DEPOSITED GE3N4 FILMS AND GE3N4-GE INTERFACE [J].

YASHIRO, T .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (06) :780-&

[9] FREQUENCY AND TEMPERATURE DEPENDENCE OF C-V CHARACTERISTICS AT GE-SIO2 INTERFACE AND BT TREATMENTS [J].

YASHIRO, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1970, 9 (07) :740-&

[10]

ZABOTIN VM, 1977, MIKROELEKTRONIKA, V6, P359

← 1 →